Drawing device - Company Ranking(6 companyies in total)
Last Updated： Aggregation Period:Jul 23, 2025〜Aug 19, 2025
This ranking is based on the number of page views on our site.
Display Company Information
| Company Name | Featured Products | ||
|---|---|---|---|
| Product Image, Product Name, Price Range | overview | Application/Performance example | |
Laser drawing device "DWL 2000 GS" series
More than 100million yen |
【Device Performance】 *When using binary drawing and selecting Write Mode 1 ■ Minimum Drawing Size [μm]: 0.5 ■ Minimum L&S [HP, μm]: 0.7 ■ Line Edge Roughness [3σ, nm]: 40 ■ CD Uniformity [3σ, nm]: 60 ■ Registration [3σ, nm]: 200 *For more details, please refer to the catalog or feel free to contact us. | 【Applications】 ■ 2.5D grayscale exposure for thick film resist (micro lenses, Fresnel lenses, DOE, holographic printing, security applications, etc.) ■ Exposure to masks and wafers and other substrates ■ Patterning for semiconductors, sensors, MEMS, MOEMS, microchannels, waveguides, and all other applications requiring fine structures *For more details, please refer to the catalog or feel free to contact us. | |
Laser Direct Writing Device "DWL 66+"
More than 100million yen |
【Example of Drawing Mode】 ■Drawing Mode: HR (High Resolution Mode 0.3um) ■Minimum Address Grid (nm): 5 ■Minimum Drawing Size (μm): 0.3 ■Edge Roughness (3σ, nm): 50 ■CD Uniformity (3σ, nm): 60 ■Overlay Accuracy (3σ, nm): 500 *For more details, please refer to the catalog or feel free to contact us. | 【Applications】 ■ Small lot mask creation ■ Maskless exposure, laser direct writing, laser direct drawing, 2.5D grayscale exposure ■ Patterning for semiconductors, FPD, sensors, MEMS, microchannels, micro-optics, waveguides, DOE, holograms, and other applications requiring microstructure fabrication *For more details, please refer to the catalog or feel free to contact us. | |
"ULTRA" series of mask laser drawing devices for semiconductors.
More than 100million yen |
【Basic Performance】 ■Minimum Pattern Size: 500nm ■Drawing Speed: 580mm²/min (FX mode), 325mm²/min (QX mode) ■Line Edge Roughness: 20nm (QX mode) ■CD Uniformity: 30nm (QX mode) ■Overlay: 30nm (QX mode) ■Position Accuracy: 40nm (QX mode) ■Maximum Drawing Area: 228mm x 228mm (Optionally up to 400mm x 400mm) ■Auto Loader for Masks *For more details, please refer to the catalog or feel free to contact us. | Photomask for semiconductors | |
|
---
--- |
--- | ||
ハイデルベルグ・インストルメンツ
-
- Featured Products
-
Laser drawing device "DWL 2000 GS" series
- overview
- 【Device Performance】 *When using binary drawing and selecting Write Mode 1 ■ Minimum Drawing Size [μm]: 0.5 ■ Minimum L&S [HP, μm]: 0.7 ■ Line Edge Roughness [3σ, nm]: 40 ■ CD Uniformity [3σ, nm]: 60 ■ Registration [3σ, nm]: 200 *For more details, please refer to the catalog or feel free to contact us.
- Application/Performance example
- 【Applications】 ■ 2.5D grayscale exposure for thick film resist (micro lenses, Fresnel lenses, DOE, holographic printing, security applications, etc.) ■ Exposure to masks and wafers and other substrates ■ Patterning for semiconductors, sensors, MEMS, MOEMS, microchannels, waveguides, and all other applications requiring fine structures *For more details, please refer to the catalog or feel free to contact us.
Laser Direct Writing Device "DWL 66+"
- overview
- 【Example of Drawing Mode】 ■Drawing Mode: HR (High Resolution Mode 0.3um) ■Minimum Address Grid (nm): 5 ■Minimum Drawing Size (μm): 0.3 ■Edge Roughness (3σ, nm): 50 ■CD Uniformity (3σ, nm): 60 ■Overlay Accuracy (3σ, nm): 500 *For more details, please refer to the catalog or feel free to contact us.
- Application/Performance example
- 【Applications】 ■ Small lot mask creation ■ Maskless exposure, laser direct writing, laser direct drawing, 2.5D grayscale exposure ■ Patterning for semiconductors, FPD, sensors, MEMS, microchannels, micro-optics, waveguides, DOE, holograms, and other applications requiring microstructure fabrication *For more details, please refer to the catalog or feel free to contact us.
"ULTRA" series of mask laser drawing devices for semiconductors.
- overview
- 【Basic Performance】 ■Minimum Pattern Size: 500nm ■Drawing Speed: 580mm²/min (FX mode), 325mm²/min (QX mode) ■Line Edge Roughness: 20nm (QX mode) ■CD Uniformity: 30nm (QX mode) ■Overlay: 30nm (QX mode) ■Position Accuracy: 40nm (QX mode) ■Maximum Drawing Area: 228mm x 228mm (Optionally up to 400mm x 400mm) ■Auto Loader for Masks *For more details, please refer to the catalog or feel free to contact us.
- Application/Performance example
- Photomask for semiconductors
-
ハイデルベルグ・インストルメンツ
Membership (free) is required to view all content.
Already a Member? Log In Here
